Herve Jaouen
19Patents
6h-index
11Co-inventors
63Inventor score
Filing activity: Jun 26, 1998 → Feb 9, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6031445A | Transformer for integrated circuits | Emerging Cross-Sectional Technologies | 176 | Expired |
| US6081030A | Semiconductor device having separated exchange means | Electricity | 17 | Expired |
| US6100595A | Semiconductor device having optoelectronic remote signal-exchange means | Electricity | 10 | Expired |
| US6673703B2 | Method of fabricating an integrated circuit | Electricity | 9 | Expired |
| US6897545B2 | Lateral operation bipolar transistor and a corresponding fabrication process | Electricity | 8 | Expired |
| US6670686B2 | Integrated sound transmitter and receiver, and corresponding method for making same | Physics | 8 | Expired |
| US6623993B2 | Method of determining the time for polishing the surface of an integrated circuit wafer | Electricity | 3 | Expired |
| US6756279B2 | Method for manufacturing a bipolar transistor in a CMOS integrated circuit | Electricity | 2 | Expired |
| US9929039B2 | Method for manufacture of a semiconductor wafer suitable for the manufacture of an SOI substrate, and SOI substrate wafer thus obtained | Electricity | 2 | Active |
| US7396736B2 | Magnetic sensor of very high sensitivity | Emerging Cross-Sectional Technologies | 1 | Expired |
| US6208551A | Memory circuit architecture | Physics | 1 | Expired |
| US7038285B2 | Very high sensitivity magnetic sensor | Emerging Cross-Sectional Technologies | 1 | Expired |
| US6503812B2 | Fabrication process for a semiconductor device with an isolated zone | Electricity | 1 | Expired |
| US7029927B2 | Method of repairing an integrated electronic circuit using a formed electrical isolation | Electricity | 0 | Expired |
| US6593204B2 | Method of fabricating a silicon-on-insulator system with thin semiconductor islets surrounded by an insulative material | Electricity | 0 | Expired |
| US7029991B2 | Method for making a SOI semiconductor substrate with thin active semiconductor layer | Electricity | 0 | Expired |
| US6423996B1 | Process for fabricating a metal-metal capacitor within an integrated circuit, and corresponding integrated circuit | Electricity | 0 | Expired |
| US6800514B2 | Method of fabricating a MOS transistor with a drain extension and corresponding transistor | Electricity | 0 | Expired |
| US10535552B2 | Method for manufacture of a semiconductor wafer suitable for the manufacture of an SOI substrate, and SOI substrate wafer thus obtained | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.