Method of fabricating a patterned metal-containing layer on a semiconductor wafer
US6593228B2 · kind B2 · utility
1Cited by
7References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 12, 2002 |
| Grant date | Jul 15, 2003 |
| Priority date | — |
| Expiry date | Apr 12, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/692
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metal-containing layer is formed on a substrate. A mask layer is formed on the metal-containing layer. The mask layer is patterned by way of a lithographically fabricated mask. The metal-containing layer is patterned with the patterned mask layer, to thereby form an electrode out of the metal-containing layer. A protective layer is deposited on the mask layer and on the substrate. The protective layer undergoes chemical mechanical polishing, during which the protective layer is removed and the electrode is uncovered.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.