Semiconductor integrated circuit device and method for manufacturing the same
US6593229B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 9, 2000 |
| Grant date | Jul 15, 2003 |
| Priority date | — |
| Expiry date | Jan 8, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Described is a manufacturing method for a semiconductor integrated circuit device which comprises forming, over a gate insulating film which has been formed over the main surface of a single crystal silicon substrate to have an effective film thickness less than 5 nm in terms of Sio2, a W film as a gate electrode material, and heat treating the silicon substrate in a water-vapor- and hydrogen-containing gas atmosphere having a water vapor/hydrogen partial pressure ratio set at a ratio permitting oxidation of silicon without substantial oxidation of the W film, whereby defects of the gate insulating film rightly under the W film are repaired. According to the present invention, in a MISFET having a metal gate electrode formed over a ultra-thin gate insulating film having an effective film thickness less than 5 nm in terms of SiO2, defects of the gate insulating film can be repaired without oxidizing the metal gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.