Method for producing hydrogenated silicon oxycarbide films having low dielectric constant
US6593248B2 · kind B2 · utility
10Cited by
3References
21Claims
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Key dates
| Filing date | Mar 20, 2002 |
| Grant date | Jul 15, 2003 |
| Priority date | — |
| Expiry date | Mar 20, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing fluorinated hydrogenated silicon oxycarbide (H:F:SiOC) and amorphous fluorinated hydrogenated silicon carbide (H:F:SiC) films having low dielectric permittivity. The method comprises reacting a silicon containing compound with a fluorocarbon or fluorohydrocarbon compound having an unsaturated carbon bonded to F or H. The resulting films are useful in the formation of semiconductor devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.