Cleaning solutions for semiconductor substrates after polishing of copper film
US6593282B1 · kind B1 · utility
8Cited by
18References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 9, 1998 |
| Grant date | Jul 15, 2003 |
| Priority date | — |
| Expiry date | Jul 1, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/22
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A cleaning solution, method, and apparatus for cleaning semiconductor substrates after chemical mechanical polishing of copper films is described. The present invention includes a cleaning solution which combines deionized water, an organic compound, and an ammonium compound in an acidic pH environment for cleaning the surface of a semiconductor substrate after polishing a copper layer. Such methods of cleaning semiconductor substrates after copper CMP alleviate the problems associated with brush loading and surface and subsurface contamination.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.