Silicon carbide n-channel power LMOSFET

US6593594B1 · kind B1 · utility

Assignee

• KONINKLIJKE PHILIPS ELECTRONICS NV · NL

Inventor

• Dev Alok · Raleigh, US

Key dates

• Filing date: Dec 21, 1999
• Grant date: Jul 15, 2003
• Expiry date: Dec 21, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/111

Abstract

A lateral metal-oxide-semiconductor field effect transistor (LMOSFET) includes a layer of silicon carbide semiconductor material having a p-type conductivity, source and drain regions having n-type conductivities disposed in the silicon carbide semiconductor layer, and an insulated gate electrode disposed on the silicon carbide semiconductor layer. A silicon carbide semiconductor substrate having an n-type conductivity, supports the silicon carbide semiconductor layer. A second layer of silicon carbide semiconductor material having a p-type conductivity, is disposed between the substrate and the first silicon carbide semiconductor layer to prevent parasitic transistor effects. A sinker region having an n-type conductivity extends from the source contact to the silicon carbide semiconductor substrate to ground the substrate.