Method for producing hydrogenated silicon oxycarbide films having low dielectric constant
US6593655B1 · kind B1 · utility
44Cited by
65References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 14, 2000 |
| Grant date | Jul 15, 2003 |
| Priority date | — |
| Expiry date | Aug 14, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention pertains to a method for producing hydrogenated silicon oxycarbide (H:SiOC) films having low dielectric constant. The method comprises reacting an methyl-containing silane in a controlled oxygen environment using plasma enhanced or ozone assisted chemical vapor deposition to produce the films. The resulting films are useful in the formation of semiconductor devices and have a dielectric constant of 3.6 or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.