Plasma treatment to enhance inorganic dielectric adhesion to copper

US6593660B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Leena Paivikki Buchwalter · Hopewell Junction, US
• Barbara Luther · Cold Spring, US
• Paul D. Agnello · Wappingers Falls, US
• John P. Hummel · Millbrook, US
• Terence L. Kane · Beacon, US
• Dirk Manger · Dresden, DE
• Paul S. McLaughlin · Poughkeepsie, US
• Anthony K. Stamper · Williston, US
• Yun-Yu Wang · Poughquag, US

Key dates

• Filing date: May 29, 2001
• Grant date: Jul 15, 2003
• Expiry date: May 29, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76807
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present invention utilizes a reducing plasma treatment step to enhance the adhesion of a subsequently deposited inorganic barrier film to a copper wire or via present in a semiconductor interconnect structure such as a dual damascene structure. Interconnect structure including a material layer of Cu, Si and O, as essential elements, is formed between said copper wire or via and the inorganic barrier film.