High density giant magnetoresistive memory cell
US6594175B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2001 |
| Grant date | Jul 15, 2003 |
| Priority date | — |
| Expiry date | Nov 16, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/161
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A multi-layered memory cell is described having a plurality of magnetic layers, each of the magnetic layers being for magnetically storing one bit of information. A plurality of access lines are integrated with the plurality of magnetic layers and configured such that the bits of information stored in each of selected ones of the magnetic layers may be independently accessed using selected ones of the plurality of access lines and the giant magnetoresistive effect. The memory cell further includes at least one keeper layer. The magnetic layers, the access lines, and the at least one keeper layer form a substantially closed flux structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.