III-V nitride substrate boule and method of making and using the same
US6596079B1 · kind B1 · utility
250Cited by
15References
49Claims
0Family size
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Key dates
| Filing date | Mar 13, 2000 |
| Grant date | Jul 22, 2003 |
| Priority date | — |
| Expiry date | Mar 13, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A boule formed by high rate vapor phase growth of Group III-V nitride boules (ingots) on native nitride seeds, from which wafers may be derived for fabrication of microelectronic device structures. The boule is of microelectronic device quality, e.g., having a transverse dimension greater than 1 centimeter, a length greater than 1 millimeter, and a top surface defect density of less than 107 defects cm−2. The Group III-V nitride boule may be formed by growing a Group III-V nitride material on a corresponding native Group III-V nitride seed crystal by vapor phase epitaxy at a growth rate above 20 micrometers per hour.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.