Epitaxial silicon wafer free from autodoping and backside halo and a method and apparatus for the preparation thereof
US6596095B2 · kind B2 · utility
19Cited by
10References
35Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 29, 2000 |
| Grant date | Jul 22, 2003 |
| Priority date | — |
| Expiry date | Dec 29, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/10
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A single crystal silicon wafer with a back surface free of an oxide seal and substantially free of a chemical vapor deposition process induced halo and an epitaxial silicon layer on the front surface, the epitaxial layer is characterized by an axially symmetric region extending radially outwardly from the central axis of the wafer toward the circumferential edge of the wafer having a substantially uniform resistivity, the radius of the axially symmetric region being at least about 80% of the length of the radius of the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.