Method for monitoring substrate biasing during plasma processing of a substrate
US6596550B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 8, 2002 |
| Grant date | Jul 22, 2003 |
| Priority date | — |
| Expiry date | Mar 8, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32706
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A processing system for processing a substrate with a plasma comprises a processing chamber configured for containing a plasma and a substrate support. Electrodes are coupled to the substrate support and an RF power source is coupled to each of the electrodes for biasing the electrodes to create a DC bias on a substrate positioned on the supporting surface. A first comparator having first and second inputs is electrically coupled to one of the electrodes with an isolating device being coupled between the first and second inputs to isolate the first input from the bias on the one electrode. The comparator has an output reflective of a voltage difference between the first and second inputs. A second comparator has a first input coupled to the first electrode and a second input coupled to the second electrode, and has an output reflective of a voltage difference between the first and second inputs resulting from the bias difference between the first and second electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.