Forming of quantum dots
US6596555B2 · kind B2 · utility
14Cited by
15References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 3, 2001 |
| Grant date | Jul 22, 2003 |
| Priority date | — |
| Expiry date | Aug 3, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/891
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming, on a single-crystal semiconductor substrate of a first material, quantum dots of a second material, including growing by vapor phase epitaxy the second material on the first material in optimal conditions adapted to ensuring a growth at a maximum controllable rate. In an initial step, a puff of a gas containing the second material is sent on the substrate, in conditions corresponding to a deposition rate much faster than the maximum controllable rate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.