Dual non-parallel electronic field electro-optic effect device
US6597011B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 29, 2000 |
| Grant date | Jul 22, 2003 |
| Priority date | — |
| Expiry date | Sep 12, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/21
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
An improved optical modulator and photodetector suitable for high frequency operation and compatible with monolithic microwave integrated circuit technology. Typical implementations use a reversed biased diode containing not intentionally doped (NID) optically active region sandwiched between conductive layers of p-doped and n-doped semiconductor layers, respectively. With monochromatic optical radiation incident upon the device a photocurrent (comprising of an electron-hole pair created for each photon absorbed) can be generated using the optical nonlinearity of the multiple quantum well structure inside the active region. This photocurrent can be used in an external circuit to provide photocurrent feedback to the device itself.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.