Multi-value single electron memory using double-quantum dot and driving method thereof
US6597036B1 · kind B1 · utility
28Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 20, 2000 |
| Grant date | Jul 22, 2003 |
| Priority date | — |
| Expiry date | Oct 20, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2216/08
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A multi-value single electron memory using a multi-quantum dot, in which the floating gates (FG) of a EEPROM or a flash memory are formed to act as two quantum dots, and the two quantum dots are applied to multi-value memories, and a driving method of the multi-value single electron memory, are provided. Thus, a multi-value memory can be realized using two quantum dots. Also, an ultra-highly integrated memory of 1 Tb or greater can be realized without encountering a physical limit such as a short channel effect (SCE) caused by scaling down MOSFETs, in contrast to other memories.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.