Method of depositing a thick dielectric film
US6598610B2 · kind B2 · utility
1Cited by
2References
13Claims
0Family size
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Key dates
| Filing date | Feb 5, 2001 |
| Grant date | Jul 29, 2003 |
| Priority date | — |
| Expiry date | May 20, 2021 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4405
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Thick dielectric films are deposited on a substrate by building up a plurality of layers by PECVD (Plasma Enhanced Chemical Vapor Deposition) in a reactor, each layer having a thickness less than the final thickness of the film to be deposited. The reactor is cleaned between the deposition of each layer. In this way, it is possible to form high quality, optical films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.