Method for forming a finely patterned photoresist layer
US6599682B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 23, 2001 |
| Grant date | Jul 29, 2003 |
| Priority date | — |
| Expiry date | Aug 25, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/151
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The invention discloses an improvement in the photolithographic patterning method of a photoresist layer formed on a substrate surface with intervention of an anti-reflection coating film, in which the refractive index and the light-absorption coefficient of the anti-reflection coating film are controlled in such a way that, in a graph prepared by plotting the thickness of the anti-reflection coating film taken as the abscissa values and the reflectivity of the light for patterning exposure at the interface between the anti-reflection coating film and the photoresist layer thereon taken as the ordinate values, the range of the variation in the film thickness corresponding to an increment of 0.01 in the reflectivity in the vicinity of the minimum point on the thickness vs. reflectivity curve does not exceed ±0.01 &mgr;m.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.