Method for removal of sic
US6599814B1 · kind B1 · utility
14Cited by
6References
19Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Feb 19, 2002 |
| Grant date | Jul 29, 2003 |
| Priority date | — |
| Expiry date | Feb 19, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is related to a method for removal of silicon carbide layers and in particular amorphous SiC of a substrate. Initially, the exposed part of a carbide-silicon layer is at least partly converted into an oxide-silicon layer by exposing the carbide-silicon layer to an oxygen containing plasma. The oxide-silicon layer is then removed from the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.