Serge Vanhaelemeersch
21Patents
10h-index
32Co-inventors
71Inventor score
Filing activity: May 27, 1998 → Nov 13, 2012
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7338896B2 | Formation of deep via airgaps for three dimensional wafer to wafer interconnect | Electricity | 252 | Active |
| US7566634B2 | Method for chip singulation | Electricity | 46 | Active |
| US6607950B2 | MIS transistors with a metal gate and high-k dielectric and method of forming | Electricity | 41 | Expired |
| US6635964B2 | Metallization structure on a fluorine-containing dielectric and a method for fabrication thereof | Electricity | 23 | Expired |
| US6380039B2 | Method for forming a FET having L-shaped insulating spacers | Electricity | 14 | Expired |
| US6593251B2 | Method to produce a porous oxygen-silicon layer | Electricity | 14 | Expired |
| US6245489A | Fluorinated hard mask for micropatterning of polymers | Electricity | 14 | Expired |
| US6599814B1 | Method for removal of sic | Emerging Cross-Sectional Technologies | 14 | Expired |
| US6352936B1 | Method for stripping ion implanted photoresist layer | Physics | 12 | Expired |
| US6323555A | Metallization structure on a fluorine-containing dielectric and a method for fabrication thereof | Electricity | 11 | Expired |
| US8540890B2 | Protective treatment for porous materials | Electricity | 7 | Active |
| US6844266B2 | Anisotropic etching of organic-containing insulating layers | Electricity | 6 | Expired |
| US6844267B1 | Anisotropic etching of organic-containing insulating layers | Electricity | 5 | Expired |
| US7807583B2 | High aspect ratio via etch | Performing Operations; Transporting | 5 | Active |
| US6806501B2 | Integrated circuit having SiC layer | Emerging Cross-Sectional Technologies | 5 | Expired |
| US6096657A | Method for forming a spacer | Electricity | 4 | Expired |
| US7042091B2 | Fluorinated hard mask for micropatterning of polymers | Electricity | 4 | Expired |
| US7611986B2 | Dual damascene patterning method | Electricity | 2 | Active |
| US6900140B2 | Anisotropic etching of organic-containing insulating layers | Electricity | 2 | Expired |
| US7557027B2 | Method of producing microcystalline silicon germanium suitable for micromachining | Electricity | 2 | Active |
| US6821884B2 | Method of fabricating a semiconductor device | Electricity | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.