Method and apparatus for forming a silicon wafer with a denuded zone
US6599815B1 · kind B1 · utility
11Cited by
49References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 30, 2000 |
| Grant date | Jul 29, 2003 |
| Priority date | — |
| Expiry date | Mar 14, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3225
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An apparatus and method for forming an epitaxial layer on and a denuded zone in a semiconductor wafer. A single chamber is used to form both the epitaxial layer and the denuded zone. The denuded zone is formed by heating the wafer in the chamber and then rapidly cooling the wafer while it is supported on an annular support whereby only a peripheral edge portion of the wafer is in contact with the support.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.