Method for improving package bonding between multi-level interconnection lines and low K inter-metal dielectric
US6599823B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 24, 2000 |
| Grant date | Jul 29, 2003 |
| Priority date | — |
| Expiry date | Mar 26, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for improving package bonding between multi-level interconnection lines and low K inter-metal dielectric is provided. The present invention includes the steps of forming a trench between each pair of interconnection lines on one level of multi-level interconnection lines, and then filling the trench with an oxide dielectric material, instead of the low K inter-metal dielectric having a K value smaller than 3 filled therein before the trench formation. Since the oxide dielectric material has a K value higher than the low K inter-metal dielectric, the oxide dielectric is hard enough to resist the force of the package bonding. Accordingly, the relibility of bondability between the multi-level interconnection lines and the low K inter-metal dielectric is enhanced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.