Method for manufacturing a semiconductor device
US6599841B2 · kind B2 · utility
4Cited by
12References
13Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 29, 1999 |
| Grant date | Jul 29, 2003 |
| Priority date | — |
| Expiry date | Jun 29, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32136
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device including a conductive pattern having a first layer including Ti and a second layer including W is presented. The method includes the steps of patterning the conductive pattern by a dry etching and exposing the conductive pattern after the step of the patterning to a plasma containing O, thereby removing the remaining Cl which induces an aftercorrosion problem of the conductive pattern containing the Ti.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.