EEPROM with a neutralized doping at tunnel window edge
US6600188B1 · kind B1 · utility
22Cited by
3References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2002 |
| Grant date | Jul 29, 2003 |
| Priority date | — |
| Expiry date | Feb 26, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
Abstract
An improved method for fabricating a tunnel oxide window for use in an EEPROM memory cell is provided so as to produce better programming endurance. P-type lightly-doped drain regions are located at the polysilicon edges of the tunnel window. During the programming operation, the P-type lightly-doped drain regions are in contacting with the polysilicon edges. As a result, there is reduced or suppressed the tunneling current to the program junction region so as to improve the efficiency of programming.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.