Seedlayer for plating metal in deep submicron structures
US6600230B2 · kind B2 · utility
0Cited by
6References
1Claims
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Key dates
| Filing date | Jul 9, 2001 |
| Grant date | Jul 29, 2003 |
| Priority date | — |
| Expiry date | Jul 9, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24917
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for plating metal in submicron structures. A seedlayer is deposited on surfaces of submicron structures. The seedlayer is annealed at a temperature of about 80° C. to about 130° C. Metal is plated on the seedlayer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.