Programmable photolithographic mask system and method
US6600551B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 12, 2002 |
| Grant date | Jul 29, 2003 |
| Priority date | — |
| Expiry date | Jun 12, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70291
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention overcomes many of the disadvantages of prior lithographic microfabrication processes while providing further improvements that can significantly enhance the ability to make more complicated semiconductor chips at lower cost. A new type of programmable structure for exposing a wafer allows the lithographic pattern to be changed under electronic control. This provides great flexibility, increasing the throughput and decreasing the cost of chip manufacture and providing numerous other advantages. The programmable structure consists of an array of shutters that can be programmed to either transmit light to the wafer (referred to as its “open” state) or not transmit light to the wafer (referred to as its “closed” state). The programmable structure can comprise or include an array of selective amplifiers. Thus, each selective amplifier is programmed to either amplify light (somewhat analogous to the “open” or “transparent” state of a shutter) or be “non-amplifying” (its “closed” or “opaque” state). In the non-amplifying state, some portion of the incident light is transmitted through…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.