PIXELLIGENT TECHNOLOGIES LLC
38Patents
29Active
38Granted
50Portfolio score
Filing activity: Apr 28, 1998 → May 14, 2021 · 3 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6291110A | Methods for transferring a two-dimensional programmable exposure pattern for photolithography | Physics | 37 | Expired |
| US8592511B2 | Synthesis, capping and dispersion of nanocrystals | Emerging Cross-Sectional Technologies | 14 | Active |
| US8920675B2 | Synthesis, capping and dispersion of nanocrystals | Emerging Cross-Sectional Technologies | 13 | Active |
| US8383316B2 | Resists for lithography | Emerging Cross-Sectional Technologies | 12 | Active |
| US6888616B2 | Programmable photolithographic mask system and method | Physics | 12 | Expired |
| US8883903B2 | Synthesis, capping and dispersion of nanocrystals | Emerging Cross-Sectional Technologies | 11 | Active |
| US7050155B2 | Advanced exposure techniques for programmable lithography | Physics | 10 | Expired |
| US10033014B2 | Advanced light extraction structure | Electricity | 9 | Active |
| US6879376B2 | Method and apparatus for exposing photoresists using programmable masks | Physics | 9 | Expired |
| US10050236B2 | Advanced light extraction structure | Electricity | 8 | Active |
| US7524616B2 | Applications of semiconductor nano-sized particles for photolithography | Physics | 5 | Expired |
| US7649615B2 | Advanced exposure techniques for programmable lithography | Physics | 5 | Active |
| US9202688B2 | Synthesis, capping and dispersion of nanocrystals | Emerging Cross-Sectional Technologies | 4 | Active |
| US6480261B2 | Photolithographic system for exposing a wafer using a programmable mask | Physics | 4 | Expired |
| US7510818B2 | Reversible photobleachable materials based on nano-sized semiconductor particles and their optical applications | Emerging Cross-Sectional Technologies | 3 | Expired |
| US10988598B2 | High refractive index solvent free silicone nanocomposites | Electricity | 3 | Active |
| US7605390B2 | Programmable photolithographic mask based on semiconductor nano-particle optical modulators | Emerging Cross-Sectional Technologies | 3 | Expired |
| US10516140B2 | Advanced light extraction structure | Electricity | 3 | Active |
| US10522791B2 | Advanced light extraction structure | Electricity | 3 | Active |
| US8344053B2 | Highly conductive composites | Emerging Cross-Sectional Technologies | 2 | Active |
| US6600551B2 | Programmable photolithographic mask system and method | Physics | 2 | Expired |
| US8993221B2 | Block co-polymer photoresist | Electricity | 2 | Active |
| US9048009B2 | Highly conductive composites | Emerging Cross-Sectional Technologies | 1 | Active |
| US10273365B2 | High refractive index nanocomposite | Emerging Cross-Sectional Technologies | 1 | Active |
| US9328432B2 | Synthesis, capping and dispersion of nanocrystals | Emerging Cross-Sectional Technologies | 1 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.