Method for generating a proximity model based on proximity rules
US6602728B1 · kind B1 · utility
51Cited by
19References
13Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 5, 2001 |
| Grant date | Aug 5, 2003 |
| Priority date | — |
| Expiry date | Mar 29, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/705
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for generating an optical proximity correction (OPC) model includes generating a set of correction rules for a wafer design containing at least one of lines and assist features, determining a set of corrections that need to be made over a range of sizes and spaces of the lines and assist features based on the set of correction rules, and creating an optical proximity correction model for correcting the wafer design based on the set of corrections.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.