Manufacturing of a thin inorganic light emitting diode
US6602731B2 · kind B2 · utility
7Cited by
3References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 24, 2002 |
| Grant date | Aug 5, 2003 |
| Priority date | — |
| Expiry date | Feb 17, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/823
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Nanoparticle dispersions of ZnS doped with a luminescent center and of CuxS are prepared together or separately by precipitation from aqueous solutions. When such dispersions are coated between conductive electrodes a Thin Film Inorganic Light Emitting Diode device is obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.