Hieronymus Andriessen
51Patents
12h-index
52Co-inventors
87Inventor score
Filing activity: Mar 7, 1995 → Jan 26, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6197418A | Electroconductive glass laminate | Emerging Cross-Sectional Technologies | 38 | Expired |
| US6811885B1 | Acid stable aqueous dispersion of metal particles and applications | Emerging Cross-Sectional Technologies | 27 | Expired |
| US6724141B2 | Particular type of a thin layer inorganic light emitting device | Electricity | 24 | Expired |
| US6706551B2 | Thin film inorganic light emitting diode | Electricity | 21 | Expired |
| US6521390B1 | Flexographic printing element comprising an IR-ablatable layer with improved sensitivity | Emerging Cross-Sectional Technologies | 17 | Expired |
| US6929970B2 | Process for preparing nano-porous metal oxide semiconductor layers | Emerging Cross-Sectional Technologies | 17 | Expired |
| US6245494A | Method of imaging a heat mode recording element comprising highly dispersed metal alloys | Emerging Cross-Sectional Technologies | 16 | Expired |
| US6737293B2 | Manufacturing of a thin film inorganic light emitting diode | Emerging Cross-Sectional Technologies | 15 | Expired |
| US6333145A | Method for preparing a conductive polythiophene layer at low temperature | Emerging Cross-Sectional Technologies | 14 | Expired |
| US7307276B2 | Layer configuration comprising an electron-blocking element | Emerging Cross-Sectional Technologies | 14 | Expired |
| US7147936B2 | Layer configuration with improved stability to sunlight exposure | Emerging Cross-Sectional Technologies | 14 | Expired |
| US6558575B2 | Perparation of improved ZnS:Mn phosphors | Electricity | 12 | Expired |
| US6927298B2 | 3,4-alkylenedioxythiophenedioxide compounds and polymers comprising monomeric units thereof | Emerging Cross-Sectional Technologies | 8 | Expired |
| US7026079B2 | Process for preparing a substantially transparent conductive layer configuration | Emerging Cross-Sectional Technologies | 8 | Expired |
| US6602731B2 | Manufacturing of a thin inorganic light emitting diode | Electricity | 7 | Expired |
| US7056600B2 | Layer configuration comprising an electron-blocking element | Emerging Cross-Sectional Technologies | 5 | Expired |
| US7118836B2 | Process for preparing a substantially transparent conductive layer configuration | Emerging Cross-Sectional Technologies | 4 | Expired |
| US6187508A | Heat mode recording element based on a thin metal layer | Emerging Cross-Sectional Technologies | 4 | Expired |
| US5712081A | Method for reproducing an electronically stored medical image on a hardcopy material | Physics | 4 | Expired |
| US5558974A | Photographic material containing a new type of hydrazide | Physics | 3 | Expired |
| US5840474A | Preparation method for (100) tabular silver halide grains rich in chloride in silica sol as binder | Physics | 3 | Expired |
| US6815711B2 | Ambipolar organic transistor | Electricity | 3 | Expired |
| US7468146B2 | Metal chalcogenide composite nano-particles and layers therewith | Emerging Cross-Sectional Technologies | 3 | Expired |
| US6911081B2 | Preparation of metal chalcogenide dispersions | Emerging Cross-Sectional Technologies | 3 | Expired |
| US6132927A | Thin metal recording layer coated from aqueous medium | Physics | 2 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.