Semiconductor transistor having a backfilled channel material
US6605498B1 · kind B1 · utility
231Cited by
1References
20Claims
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Key dates
| Filing date | Mar 29, 2002 |
| Grant date | Aug 12, 2003 |
| Priority date | — |
| Expiry date | Mar 29, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/801
Abstract
A stressed channel is formed in a PMOS transistor by etching a recess and subsequently backfilling the recess with an epitaxially formed alloy of silicon, germanium, and an n-type dopant. The alloy has the same crystal structure as the underlying silicon, but the spacing of the crystal is larger, due to the inclusion of the germanium. An NMOS transistor can be formed by including carbon instead of germanium.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.