Method of creating hydrogen isotope reservoirs in a semiconductor device
US6605529B2 · kind B2 · utility
0Cited by
5References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 11, 2001 |
| Grant date | Aug 12, 2003 |
| Priority date | — |
| Expiry date | Aug 1, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/685
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method of manufacturing a semiconductor device that includes incorporation of a hydrogen isotope at a relatively high processing temperature during gate oxidation or polysilicon gate electrode deposition to maximize incorporation of hydrogen isotope at interfaces deliberately created during oxidation (such as graded oxidation) as multilayered poly/alpha-silicon deposition process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.