Treatment of low-k dielectric films to enable patterning of deep submicron features
US6605536B2 · kind B2 · utility
5Cited by
11References
7Claims
0Family size
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Key dates
| Filing date | May 10, 2002 |
| Grant date | Aug 12, 2003 |
| Priority date | — |
| Expiry date | May 10, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76835
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Treating a low-k dielectric layer (104) using a highly oxidizing wet solution (e.g., H2SO4) to improve patterning. Resist poisoning occurs due to an interaction between low-k films (104), such as OSG, and DUV resist (130,132). The wet treatment is performed to either pre-treat a low-k dielectric (104) before forming the pattern (130,132) or during a rework of the pattern (130,132) to reduce resist poisoning.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.