Method reducing the effects of N2 gas contamination in an ion implanter
US6605812B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 22, 2002 |
| Grant date | Aug 12, 2003 |
| Priority date | — |
| Expiry date | Feb 22, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31701
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for reducing a dinitrogen (N2) ion concentration in an ion implanter including providing an ion implanter having an ion source chamber for producing source ions said ion source chamber surrounded by a plurality of source magnets having a current supply for altering a position of said source ions; providing a gaseous source of material to the ion source chamber for ionization thereby creating a supply of source ions for implantation; creating a supply of source ions to include dinitrogen (N2) ions and nitrogen (N) ions supplied for implantation; and, increasing a current supply to at least one of the plurality of source magnets such that a ratio of dinitrogen (N2) ions to nitrogen (N) ions supplied for implantation is reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.