Phase change material electronic memory structure and method for forming

US6605821B1 · kind B1 · utility

Assignee

• HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. · US

Inventors

• Heon Lee · Seoul, KR
• Dennis Lazaroff · Corvallis, US
• Neal Meyer · Corvallis, US
• Jim Ellenson · Corvallis, US
• Ken Kramer · Corvallis, US
• Kurt Ulmer · Vancouver, US
• David Pursalan · Corvallis, US
• Peter Fricke · Salem, US
• Andrew Koll · Albany, US
• Andy Van Brockin · Corvallis, US

Key dates

• Filing date: May 10, 2002
• Grant date: Aug 12, 2003
• Expiry date: May 10, 2022

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/90

Abstract

The invention includes an electronic memory structure. The electronic memory structure includes a substrate. A substantially planar first conductor is formed adjacent to the substrate. An interconnection layer is formed adjacent to the first conductor. A phase change material element is formed adjacent to the interconnection layer. The interconnection layer includes a conductive interconnect structure extending from the first conductor to the phase change material element. The interconnect structure includes a first surface physically connected to the first conductor. The interconnect structure further includes a second surface attached to the phase change material element. The second surface area of the second surface is substantially smaller than a first surface area of the first surface. A substantially planar second conductor is formed adjacent to the phase change material element.