Field-effect semiconductor device
US6605831B1 · kind B1 · utility
7Cited by
4References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 11, 2000 |
| Grant date | Aug 12, 2003 |
| Priority date | — |
| Expiry date | Sep 11, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/4755
Abstract
A field-effect semiconductor device includes a channel layer; a barrier structure formed on the channel layer and including a plurality of semiconductor layers; a plurality of ohmic electrodes formed above the barrier structure; and a Schottky electrode formed on the barrier structure between the ohmic electrodes. The barrier structure has an electron-affinity less than that of the channel layer and includes at least two heavily doped layers and a lightly doped layer provided therebetween.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.