Inventor · Nagaokakyo, JP

Hidehiko Sasaki

14Patents
4h-index
7Co-inventors
53Inventor score

Filing activity: Mar 14, 1994 → Mar 27, 2020

Most-cited inventions

PatentTitleAreaCited byStatus
US7012286B2 Heterojunction field effect transistor Electricity 13 Expired
US6180528A Method for forming a minute resist pattern and method for forming a gate electrode Electricity 10 Expired
US5420314A Asymmetric epoxidation reaction Chemistry; Metallurgy 7 Expired
US6605831B1 Field-effect semiconductor device Electricity 7 Expired
US7208777B1 Field-effect semiconductor device Electricity 4 Expired
US10903150B2 Lead frame Electricity 3 Active
US10847451B2 Device for mounting semiconductor element, lead frame, and substrate for mounting semiconductor element Electricity 2 Active
US10777492B1 Substrate for mounting semiconductor element Electricity 1 Active
US6727126B2 Masking member for forming fine electrode and manufacturing method therefor, method for forming electrode, and field effect transistor Electricity 0 Expired
US5599957A Asymmetric epoxidation reaction Chemistry; Metallurgy 0 Expired
US11062983B2 Substrate for mounting semiconductor element Electricity 0 Active
US10763196B1 Lead frame Electricity 0 Active
US10811346B2 Lead frame Electricity 0 Active
US11404286B2 Lead frame Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.