Semiconductor integrated circuit and method of switching source potential of transistor in semiconductor integrated circuit
US6605963B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 5, 1999 |
| Grant date | Aug 12, 2003 |
| Priority date | — |
| Expiry date | Oct 5, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0036
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A semiconductor integrated circuit, comprising a circuit unit having a predetermined function such as a level shifter circuit or a driver transistor circuit by a combination of a plurality of transistors, is disclosed. Among a plurality of the transistors of the circuit unit, the source potential of at least one transistor adapted to turn off during the standby period of the circuit unit is changed. Preferably, the semiconductor integrated circuit is configured to reduce the sub-threshold current flowing between the source and the drain of at least one transistor adapted to turn off during the standby period of the circuit unit by changing the source potential at a timing based on the standby period of the circuit unit in such a manner that a predetermined bias voltage is applied between the gate and the source of the transistor. A method of switching the source potential of at least one transistor in the semiconductor integrated circuit having the configuration described above is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.