Method of forming a voltage detection device and structure therefor
US6605978B1 · kind B1 · utility
4Cited by
5References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 25, 2002 |
| Grant date | Aug 12, 2003 |
| Priority date | — |
| Expiry date | Sep 25, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R19/0084
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A voltage detection device (10, 30) utilizes grounded gate J-FET transistors (16,17,18) to detect desired input voltage values. The grounded gate J-FET transistors (16,17,18) function in different modes as the input voltage varies to facilitate detecting the desired input voltage values.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.