Determination of center of focus by diffraction signature analysis
US6606152B2 · kind B2 · utility
80Cited by
20References
50Claims
0Family size
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Key dates
| Filing date | Jul 23, 2002 |
| Grant date | Aug 12, 2003 |
| Priority date | — |
| Expiry date | Jul 23, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70641
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Methods for determination of parameters in lithographic devices and applications by diffraction signature difference analysis, including determination of center of focus in lithography devices and applications. Latent image analysis may be employed with exposed but undeveloped lithographic substrates. Control methods are provided for process control of center of focus in lithography devices utilizing diffraction signature difference analysis.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.