Damascene extreme ultraviolet lithography alternative phase shift photomask and method of making
US6607862B2 · kind B2 · utility
16Cited by
2References
56Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 24, 2001 |
| Grant date | Aug 19, 2003 |
| Priority date | — |
| Expiry date | Aug 24, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/26
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photolithography mask is disclosed. The mask comprises a pattern layer that is selectively formed on a substrate in a photomask pattern. Next, a multilayer stack is formed on the pattern layer and the substrate. The multilayer stack is comprised of a plurality of pairs of thin films. Finally, an absorptive layer is disposed in trenches formed within the multilayer stack. The absorptive layer is absorptive of an EUV illuminating radiation. Further, the trenches are located substantially over the borders between the pattern layer and the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.