Method for fabricating a CMOS image sensor
US6607951B2 · kind B2 · utility
21Cited by
17References
10Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 26, 2001 |
| Grant date | Aug 19, 2003 |
| Priority date | — |
| Expiry date | Jun 26, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/026
Abstract
A fabrication method for a CMOS image sensory device is described. An isolation layer is formed in the substrate to isolate a photodiode sensory region and a transistor device region. A gate structure is further formed on the transistor device region, followed by forming concurrently a source/drain region in the transistor device region beside the side of the gate structure and a doped region in the photodiode sensory region. Thereafter, a self-aligned block is formed on the photodiode sensory region, followed by forming a protective layer on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.