Manufacturing method of semiconductor integrated circuit device
US6607988B2 · kind B2 · utility
29Cited by
1References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2000 |
| Grant date | Aug 19, 2003 |
| Priority date | — |
| Expiry date | Dec 28, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
With a view to providing a technique for highly-selective etching of Ru (ruthenium) using a photoresist as an etching mask, an Ru-film, which is an lower electrode material deposited on the side walls and bottom surface of a hole, is covered with a photoresist film, followed by isotropic dry etching in a gas atmosphere containing an ozone gas, whereby a portion of the Ru film outside of the hole is removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.