Semiconductor light emitting diode on a misoriented substrate
US6608328B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 5, 2001 |
| Grant date | Aug 19, 2003 |
| Priority date | — |
| Expiry date | Feb 5, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/973
Abstract
A light emitting diode is made by a compound semiconductor in which light is emitted from an active region with a multiple quantum well structure. The active region is sandwiched by InGaAlP-based lower and upper cladding layers. Emission efficiency of the active region is improved by adding light and electron reflectors in the light emitting diode. These InGaAlP-based layers are grown epitaxially by Organometallic Vapor-Phase Epitaxy (OMVPE) on a GaAs substrate with a misorientation angle toward <111>A to improve the quality and surface morphology of the epilayer and performance in light emitting. The lower cladding layer of first conductivity type forms on a misoriented substrate with the same type of conductivity. Light transparent and current diffusion layers with a second conductivity is formed on top of the upper cladding layer for the spreading of current and expansion of the emission light. These light transparent layers include a barrier layer, a lattice gradient layer, and a window layer with band gaps transparent to the emitting light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.