High voltage vertical conduction superjunction semiconductor device
US6608350B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 7, 2000 |
| Grant date | Aug 19, 2003 |
| Priority date | — |
| Expiry date | Dec 7, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
Abstract
A high voltage vertical conduction semiconductor device has a plurality of deep trenches or holes in a lightly doped body of one conductivity type. A diffusion of the other conductivity type is formed in the trench walls to a depth and a concentration which matches that of the body so that, under reverse blocking, both regions fully deplete. The elongated trench or hole is filled with a dielectric which may be a composite of nitride and oxide layers having a lateral dimension change matched to that of the silicon. The filler may also be a highly resistive SIPOS which permits leakage current flow from source to drain to ensure a uniform electric field distribution along the length of the trench during blocking.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.