Semiconductor device and method of manufacturing the same, circuit board, and electronic equipment
US6608371B2 · kind B2 · utility
165Cited by
11References
37Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 11, 2001 |
| Grant date | Aug 19, 2003 |
| Priority date | — |
| Expiry date | Jul 11, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/351
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes: a first step of forming a first through hole that penetrates the location of the electrode in a semiconductor element having an electrode; a second step of providing an insulating material in a region including an inside of the first through hole, in such a manner that a second through hole is provided penetrating through the insulating material; and a third step of providing a conductive member within the second through hole that penetrates through at least the insulating material in the inside of the first through hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.