Selectively doped electrostatic discharge layer for an integrated circuit sensor
US6610555B1 · kind B1 · utility
7Cited by
61References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 28, 2000 |
| Grant date | Aug 26, 2003 |
| Priority date | — |
| Expiry date | May 17, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/958
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A structure and method for creating an integrated circuit passivation structure including, a circuit, a dielectric, and metal plates over which an insulating layer is disposed that electrically isolates the circuit, and a discharge layer that is deposited to form the passivation structure that protects the circuit from electrostatic discharges caused by, e.g., a finger, is disclosed. The discharge layer additionally contains dopants selectively deposited to increase electrostatic discharge carrying capacity while maintaining overall sensing resolution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.