Method for forming a retrograde implant
US6610585B1 · kind B1 · utility
3Cited by
21References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2002 |
| Grant date | Aug 26, 2003 |
| Priority date | — |
| Expiry date | Feb 26, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of ion implantation is provided. The method comprising: providing a substrate; forming a masking image having a sidewall on the substrate; forming a blocking layer on the substrate and on the masking image; and performing a retrograde ion implant through the blocking layer into the substrate, wherein the blocking layer substantially blocks ions scattered at the sidewall of the masking layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.