Method for producing semiconductor and semiconductor laser device
US6611005B2 · kind B2 · utility
9Cited by
8References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 2, 2001 |
| Grant date | Aug 26, 2003 |
| Priority date | — |
| Expiry date | Mar 2, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0137
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The method for producing a semiconductor of the present invention grows a compound semiconductor on a substrate held by a susceptor provided, in a reaction chamber in accordance with a metalorganic vapor phase epitaxy technique. The method includes the steps of: supplying a Group III source gas containing indium and a Group V source gas containing nitrogen into the reaction chamber; and mixing the Group III and Group V source gases, supplied into the reaction chamber, with each other, and supplying a rare gas as a carrier gas into the reaction chamber so as to carry the mixed source gas onto the upper surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.