Exposure apparatus, semiconductor device, and photomask
US6611317B1 · kind B1 · utility
7Cited by
5References
4Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Feb 16, 2001 |
| Grant date | Aug 26, 2003 |
| Priority date | — |
| Expiry date | Feb 16, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70958
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An exposure apparatus, wherein at least one of optical members constituting an exposure light source system, an illuminating optical system, a photomask and a projection optical system, is made of a synthetic quartz glass for an optical member, which has an absorption coefficient of 0.70 cm−1 or less at a wavelength of 157 nm and an infrared absorption peak attributable to SiOH stretching vibration at about 3640 cm−1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.