Magnetoresistive element and magnetic memory device
US6611405B1 · kind B1 · utility
118Cited by
20References
3Claims
0Family size
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Key dates
| Filing date | Sep 14, 2000 |
| Grant date | Aug 26, 2003 |
| Priority date | — |
| Expiry date | Mar 25, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/115
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive element has a ferromagnetic double tunnel junction having a stacked structure of a first antiferromagnetic layer/a first ferromagnetic layer/a first dielectric layer/a second ferromagnetic layer/a second dielectric layer/a third ferromagnetic layer/a second antiferromagnetic layer. The second ferromagnetic layer that is a free layer consists of a Co-based alloy or a three-layered film of a Co-based alloy/a Ni—Fe alloy/a Co-based alloy. A tunnel current is flowed between the first ferromagnetic layer and the third ferromagnetic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.